Method of reducing number of particles on low-k material layer

Details Method of reducing number of particles on low-k material layer Method of reducing number of particles on low-k material layer

2006-02-10

2010-12-14

Chen, Bret (Department: 1715)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S578000, C427S579000

Reexamination Certificate

active

07851030

ABSTRACT:
A method of reducing the number of particles on a low-k material layer is described. The low-k material layer is formed by a plasma enhanced chemical vapor deposition process, wherein a reaction gas, a cleaning gas, a high-frequency power and a low-frequency power are used. The method includes turning off the reaction gas and the low-frequency power after the low-k material layer is formed, and continuing to provide the cleaning gas during a delay time.

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