Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-07-03
2010-11-30
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S258000, C257SE21179, C257S021000
Reexamination Certificate
active
07842564
ABSTRACT:
In a method of manufacturing a semiconductor memory device, an opening is made in a part of an insulating film formed on a silicon substrate. An amorphous silicon thin film is formed on the insulating film in which the opening has been made and inside the opening. Then, a monocrystal is solid-phase-grown in the amorphous silicon thin film, with the opening as a seed, thereby forming a monocrystalline silicon layer. Then, the monocrystalline silicon layer is heat-treated in an oxidizing atmosphere, thereby thinning the monocrystalline silicon layer and reducing the defect density. Then, a memory cell array is formed on the monocrystalline silicon layer which has been thinned and whose defect density has been reduced.
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Aiso Fumiki
Ishida Hirokazu
Mizukami Makoto
Mizushima Ichiro
Ozawa Yoshio
Booth Richard A.
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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