Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2005-06-03
2010-02-02
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S415000, C257S467000, C257SE27008
Reexamination Certificate
active
07655944
ABSTRACT:
Embodiments of systems and methods for estimating channel temperatures of a field effect transistor structure are disclosed. One method embodiment, among others, comprises receiving geometrical values corresponding to a field effect transistor (FET) structure, and associating the geometrical values of the FET structure to elliptical cylinder and prolate spheroidal coordinates to provide a closed form expression.
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Anderson Lawrence E.
Louie Wai-Sing
Stolarun Edward L.
The United States of America as represented by the Secretary of
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