Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Solder wettable contact – lead – or bond
Reexamination Certificate
2007-09-20
2010-02-23
Zameke, David A (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Solder wettable contact, lead, or bond
C257SE23069
Reexamination Certificate
active
07667335
ABSTRACT:
A flip chip style semiconductor package has a substrate with a plurality of active devices formed thereon. A contact pad is formed on the substrate. An under bump metallization (UBM) layer is in electrical contact with the contact pad. A passivation layer is formed over the substrate. In one case, the UBM layer is disposed above the passivation layer. Alternatively, the passivation layer is disposed above the UBM layer. A portion of the passivation layer is removed to create a passivation island. The passivation island is centered with respect to the contact pad with its top surface devoid of the UBM layer. A solder bump is formed over the passivation island in electrical contact with the UBM layer. The passivation island forms a void in the solder bump for stress relief. The UBM layer may include a redistribution layer such that the passivation island is offset from the contact pad.
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Bao Xu Sheng
Lin Yaojian
Atkins Robert D.
STATS ChipPAC Ltd.
Wagner Jenny L
Zameke David A
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