MOSFET having SOI and method

Details MOSFET having SOI and method MOSFET having SOI and method

2007-02-07

2010-12-14

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S305000, C257S509000, C257S647000, C257SE21320, C257SE21550

Reexamination Certificate

active

07851858

ABSTRACT:
Provided is a semiconductor device formed to an SOI substrate including a MOS transistor in which a parasitic MOS transistor is suppressed. The semiconductor device formed on the SOI substrate by employing a LOCOS process is structured such that a part of a polysilicon layer to becomes a gate electrode includes: a first conductivity type polysilicon region corresponding to a region of the silicon active layer which has a constant thickness and is to become a channel; and second conductivity type polysilicon regions corresponding to LOCOS isolation edges in each of which a thickness of the silicon active layer decreases.

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