Triaxial through-chip connection

Details Triaxial through-chip connection Triaxial through-chip connection

2007-03-30

2010-02-09

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S405000, C438S424000, C438S430000, C438S497000, C438S597000, C438S598000, C438S666000, C438S669000, C438S620000, C438S672000, C438S386000, C438S549000, C438S618000, C438S644000, C257S774000, C257S678000, C257SE23174, C257SE21575, C257SE21627, C257SE21641

Reexamination Certificate

active

07659202

ABSTRACT:
A method performed on a wafer having multiple chips each including a doped semiconductor and substrate involves etching an annulus trench, metalizing an inner and an outer perimeter side wall of the annulus trench, etching a via trench into the wafer, making a length of the via trench electrically conductive, thinning a surface of the substrate.

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