Method for nanostructuring of the surface of a substrate

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...

Reexamination Certificate

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C438S455000, C438S798000, C257SE21088

Reexamination Certificate

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07655578

ABSTRACT:
Under consideration here is a method for the production of periodic nanostructuring on one of the surfaces of a substrate (10), presenting a periodic network of dislocations, embedded within a crystalline area (4) located in the neighborhood of an interface (5) between the crystalline material surfaces of two components (1, 2) assembled by bonding to form the substrate (10). It comprises the following steps:formation, in the dislocations (3), of implants (6) made of a material other than that of the crystalline area (4);irradiation of the substrate (10) with electromagnetic waves (11) in order to cause absorption of electromagnetic energy localized in the implants (6), this absorption leading to the appearance of the periodic nanostructuring (12) on the surface of the substrate (10).

REFERENCES:
patent: 6261928 (2001-07-01), Bruel
patent: 6831017 (2004-12-01), Li et al.
patent: 7041227 (2006-05-01), Fournel et al.
patent: 7229897 (2007-06-01), Fournel et al.
patent: 7276424 (2007-10-01), Wei
patent: 7452790 (2008-11-01), Park et al.
patent: 2005/0064343 (2005-03-01), Romanato et al.
patent: 2005/0229837 (2005-10-01), Marty et al.
patent: 2008/0268288 (2008-10-01), Jin
patent: 2008/0272396 (2008-11-01), Fournel et al.
patent: 2 766 620 (1999-01-01), None
patent: 2 815 121 (2002-04-01), None
patent: 2 819 099 (2002-07-01), None
patent: WO 02/29876 (2002-04-01), None
D. M. Lee, et al, “Impurity gettering by misfit dislocations in Si (2% Ge) epitaxy: nickel”, Applied Physics Letters, XP000020101, vol. 53, No. 5, Aug. 1, 1988, pp. 370-372.
J. M. Moison, et al., “Self organized growth of regular nanometer-scale InAs dots on GaAs”, Applied Physics Letters, vol. 2, No. 64, Jan. 10, 1994, pp. 196-198.
L. Motte, et al., “Self-Organization into 2D and 3D Superlattices of Nanosized Particles Differing by Their Size”, J. Phys. Chem B, No. 101, 1997, pp. 138-144.
Joy Y. Cheng, et al., “Templated Self-Assembly of Block Copolymers: Effect of Substrate Topography” Advanced Materials 2003, vol. 15, No. 19, Oct. 2, pp. 1599-1602.
G. Jin, et al, “Controlled arrangement of self-organized Ge islands on patterned Si (001) substrates”, Applied Physics Letters, vol. 75, No. 18., Nov. 1, 1999, pp. 2752-2754.
Rikard A. Wind, et al., “Fabrication of nanoperiodic surface structures by controlled etching of dislocations in bicrystals”, Applied Physics Letters, vol. 78, No. 15, Apr. 9, 2001, pp. 2205-2207.

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