Static information storage and retrieval – Format or disposition of elements
Reexamination Certificate
2008-06-30
2010-11-02
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Format or disposition of elements
C365S063000, C365S072000, C257S208000, C257S211000
Reexamination Certificate
active
07826245
ABSTRACT:
A semiconductor memory includes a memory cell array area having a memory cell, a word line contact area adjacent to the memory cell array area, a word line arranged straddling the memory cell array area and the word line contact area, a contact hole provided on the word line in the word line contact area, and a word line driver connected to the word line via the contact hole. A size of the contact hole is larger than a width of the word line, and the lowest parts of the contact hole exist on a position lower than a top surface of the word line and higher than a bottom surface of the word line.
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Kato Yoshiko
Noguchi Mitsuhiro
Kabushiki Kaisha Toshiba
Nguyen Viet Q
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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