Fin-type field effect transistor and semiconductor device

Details Fin-type field effect transistor and semiconductor device Fin-type field effect transistor and semiconductor device

2006-06-05

2010-12-28

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257SE29298, C257SE29274

Reexamination Certificate

active

07859065

ABSTRACT:
A constant distance can be maintained between source/drain regions without providing a gate side wall by forming a gate electrode comprising an eaves structure, and a uniform dopant concentration is kept within a semiconductor by ion implantation. As a result, a FinFET excellent in element properties and operation properties can be obtained. A field effect transistor, wherein a gate structure body is a protrusion that protrudes toward source and drain regions sides in a channel length direction and has a channel length direction width larger than that of the part adjacent to the insulating film in a gate electrode, and the protrusion comprises an eaves structure formed by the protrusion that extends in a gate electrode extending direction on the top surface of the semiconductor layer.

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