Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-21
2010-06-15
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S316000, C257SE29129
Reexamination Certificate
active
07737486
ABSTRACT:
A non-volatile semiconductor storage device includes: a semiconductor substrate; a source region and a drain region formed in the semiconductor substrate so as to be separated from each other; a first insulating film formed between the source region and the drain region, on the semiconductor substrate; a floating electrode formed on the first insulating film and including a semiconductor conductive material layer having extension strain; a second insulating film formed on the floating electrode; and a control electrode formed on the second insulating film. The extension strain of the floating electrode becomes gradually small as the location advances from the second insulating film toward the first insulating film, and the floating electrode has extension strain of 0.01% or more at an interface between the floating electrode and the second insulating film, and has extension strain less than 0.01% at an interface between the floating electrode and the first insulating film.
REFERENCES:
patent: 6940089 (2005-09-01), Cheng et al.
patent: 7180143 (2007-02-01), Kanegae et al.
R. Arghavani, et al., “Strain Engineering in Non-Volatile Memories”, Semiconductor International, vol. 4, Apr. 1, 2006, 6 Pages.
Ken Uchida,et al., “Physical Mechanisms of Electron Mobility Enhancement in Uniaxial Stressed MOSFETs and Impact of Uniaxial Stress Engineering in Ballistic Regime”, International Electron Devices Meeting (IEDM) Technical Digest, 2005, 4 Pages.
Saitoh Masumi
Uchida Ken
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Warren Matthew E
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