Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1995-10-30

1999-03-02

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438155, 438165, 438635, H01L 214763

Patent

active

058770836

ABSTRACT:
It is intended to reduce occurrences of interlayer short-circuiting due to pinholes existing in an interlayer insulating film particularly in a circuit formed on an insulating substrate. A wiring line mainly made of an anodizable metal such as aluminum, tantalum, titanium, or the like is formed on an insulating surface, and an interlayer insulating film is so formed as to cover the metal wiring line. The substrate is then immersed in an electrolyte of, for instance, ammonium tartrate. Portions of the metal wiring line which are exposed by the pinholes of the interlayer insulating film are selectively anodized by allowing a current to flow through the wiring line by using it as one of the electrodes and gradually increasing a voltage difference between the wiring line and the opposed electrode. Thus, insulation performance of the interlayer insulating film is improved.

REFERENCES:
patent: 5236573 (1993-08-01), Shannon
patent: 5264728 (1993-11-01), Ikeda et al.
patent: 5508216 (1996-04-01), Inoue
patent: 5585290 (1996-12-01), Yamamoto
Translation of JP 1-185522, Jun. 1989.

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