Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1996-12-31

1999-03-02

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438780, 438782, 438781, H01L 21441

Patent

active

058770801

ABSTRACT:
A method of manufacturing a semiconductor device comprises a lower-metallization-layer forming step of forming a lower metallization layer on a semiconductor substrate, an insulating-film forming step of forming an interlayer insulating film on said lower metallization layer, and an upper-metallization-layer forming step of forming an upper metallization layer on said interlayer insulating film. The insulating-film forming step includes the step of mixing a solution of a particulate silanol condensate having a fluorine-silicon bond and a solution of a particulate silanol condensate having an organic group-silicon bond to prepare a solution mixture, which is applied onto the semiconductor substrate formed with the lower metallization layer and thermally treated to form the foregoing interlayer insulating film.

REFERENCES:
patent: 4652467 (1987-03-01), Brinker et al.
patent: 5494858 (1996-02-01), Gnade et al.
"Heat-resistant Adhesive Using Polyimidesiloxane for Electronic Parts" Special Report II from Industrial Materials, vol. 43, No. 7, pp. 78-84 Jul., 1995.

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