Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-12-31
1999-03-02
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438780, 438782, 438781, H01L 21441
Patent
active
058770801
ABSTRACT:
A method of manufacturing a semiconductor device comprises a lower-metallization-layer forming step of forming a lower metallization layer on a semiconductor substrate, an insulating-film forming step of forming an interlayer insulating film on said lower metallization layer, and an upper-metallization-layer forming step of forming an upper metallization layer on said interlayer insulating film. The insulating-film forming step includes the step of mixing a solution of a particulate silanol condensate having a fluorine-silicon bond and a solution of a particulate silanol condensate having an organic group-silicon bond to prepare a solution mixture, which is applied onto the semiconductor substrate formed with the lower metallization layer and thermally treated to form the foregoing interlayer insulating film.
REFERENCES:
patent: 4652467 (1987-03-01), Brinker et al.
patent: 5494858 (1996-02-01), Gnade et al.
"Heat-resistant Adhesive Using Polyimidesiloxane for Electronic Parts" Special Report II from Industrial Materials, vol. 43, No. 7, pp. 78-84 Jul., 1995.
Aoi Nobuo
Sugahara Gaku
Everhart Caridad
Matsushita Electric Industrial Co.,Ltd.
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