Threshold voltage compensation for pixel design of CMOS...

Details Threshold voltage compensation for pixel design of CMOS... Threshold voltage compensation for pixel design of CMOS...

2007-09-05

2010-11-02

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S431000, C257S446000, C348S222100

Reexamination Certificate

active

07825469

ABSTRACT:
The present disclosure is directed to a CMOS active pixel sensor that compensates for variations in a threshold voltage of a source follower contained therein. A structure in accordance with an embodiment includes: a replica source follower transistor; a system for creating a current in said replica source follower transistor such that a gate-source voltage of said replica source follower is substantially equal to a threshold voltage of said replica source follower; and a current mirror for biasing the isolation source follower transistor at a same current density as the replica source follower transistor.

REFERENCES:
patent: 6667767 (2003-12-01), Muramatsu et al.
patent: 6876235 (2005-04-01), Li et al.

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