Semiconductor device with gate dielectric containing mixed...

Details Semiconductor device with gate dielectric containing mixed... Semiconductor device with gate dielectric containing mixed...

2006-03-31

2010-10-19

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29255

Reexamination Certificate

active

07816737

ABSTRACT:
A semiconductor device, such as a transistor or capacitor, is provided. The device includes a substrate, a gate dielectric over the substrate, and a conductive gate electrode film over the gate dielectric. The gate dielectric includes a mixed rare earth oxide, nitride or oxynitride film containing at least two different rare earth metal elements.

REFERENCES:
patent: 5888870 (1999-03-01), Gardner et al.
patent: 6200898 (2001-03-01), Tu
patent: 6511925 (2003-01-01), Aronowitz et al.
patent: 6730164 (2004-05-01), Vaarstra et al.
patent: 6858546 (2005-02-01), Niinisto et al.
patent: 6914312 (2005-07-01), Nishikawa et al.
patent: 7312139 (2007-12-01), Wang et al.
patent: 7378129 (2008-05-01), Kraus et al.
patent: 7456064 (2008-11-01), Manchanda et al.
patent: 2002/0135030 (2002-09-01), Horikawa
patent: 2003/0045080 (2003-03-01), Visokay et al.
patent: 2003/0060003 (2003-03-01), Hecht et al.
patent: 2003/0072882 (2003-04-01), Niinisto et al.
patent: 2003/0168697 (2003-09-01), Tamura et al.
patent: 2004/0051126 (2004-03-01), Cuchiaro et al.
patent: 2004/0123803 (2004-07-01), Strang
patent: 2004/0129969 (2004-07-01), Colombo et al.
patent: 2004/0132315 (2004-07-01), Chambers et al.
patent: 2004/0191997 (2004-09-01), Kawahara et al.
patent: 2005/0064207 (2005-03-01), Senzaki et al.
patent: 2005/0104112 (2005-05-01), Haukka et al.
patent: 2005/0130442 (2005-06-01), Visokay et al.
patent: 2005/0136632 (2005-06-01), Rotondaro et al.
patent: 2005/0233156 (2005-10-01), Senzaki et al.
patent: 2005/0272196 (2005-12-01), Wickramanayaka et al.
patent: 2006/0054943 (2006-03-01), Li et al.
patent: 2006/0072281 (2006-04-01), Nam et al.
patent: 2006/0128092 (2006-06-01), Rouse
patent: 2006/0151823 (2006-07-01), Govindarajan
patent: 2006/0189154 (2006-08-01), Ahn et al.
patent: 2007/0004224 (2007-01-01), Currie
patent: 2007/0077750 (2007-04-01), Ma et al.
patent: 1548839 (2005-06-01), None
patent: 11168096 (1999-06-01), None
patent: 20060012926 (2006-02-01), None
patent: 20040053997 (2004-06-01), None
patent: 20050065402 (2005-07-01), None
European Patent Office, International Search Report and Written Opinion received in corresponding PCT Application No. PCT/US2007/065024, dated Aug. 20, 2007, 8 pgs.
European Patent Office, International Search Report and Written Opinion received in related PCT Application No. PCT/US2007/065342 dated Sep. 21, 2007, 18 pp.
European Patent Office, Invitation to Pay Additional Fees received in related PCT Application No. PCT/US2007/065331 dated Sep. 9, 2007, 7 pp.
European Patent Office, International Search Report and Written Opinion received in related PCT Application No. PCT/US2007/065323 dated Aug. 17, 2007, 10 pp.
U.S. Patent and Trademark Office, Non-final Office Action received in related U.S. Appl. No. 11/278,399 dated Jan. 10, 2008, 25 pp.
Myllymaki et al., High-permittivity YScO3 Thin Films by Atomic Layer Deposition Using Two Precursor Approaches, J. Mater Chem. R Soc. Chem, UK, vol. 16, No. 6; Feb. 14, 2006, pp. 563-569.
Ohmi et al., Electrical Characteristics of Rare-Earth Oxides Stacked-layer Structures, Gate Insulator, IWGI, Nov. 6, 2003, pp. 28-31.
Nakagawa et al., Magnetocaloric effects of binary rare earth mononitrides, GdxTb1-xN and TbxHo1-xN; Journal of Alloys and Compounds, Feb. 9, 2006, pp. 187-190, vol. 408-412, Elsevier, Sequoia, Lausanne, Switzerland.
Schlom, Darrel G. et al., Gate Oxides Beyond SiO2, MRS Bulletin, vol. 33, Nov. 2008, www.mrs.org/bulletin, pp. 1017-1025.
U.S. Patent and Trademark Office, Non-final Office Action received in related U.S. Appl. No. 11/278,396 dated Oct. 2, 2008, 20 pgs.
U.S. Patent and Trademark Office, Non-final Office Action received in related U.S. Appl. No. 11/278,399 dated Sep. 2, 2008, 18 pgs.
U.S. Patent and Trademark Office, Non-final Office Action received in related U.S. Appl. No. 11/278,393 dated Aug. 22, 2008, 21 pgs.
U.S. Patent and Trademark Office, Non-final Office Action received in related U.S. Appl. No. 11/278,387 dated Aug. 22, 2008, 23 pgs.
U.S. Patent and Trademark Office, Final Office Action received in related U.S. Appl. No. 11/278,393 dated Apr. 17, 2009, 17 pp.
U.S. Patent and Trademark Office, Final Office Action received in related U.S. Appl. No. 11/278,399 dated Apr. 17, 2009, 26 pp.
U.S. Patent and Trademark Office, Non-final Office Action received in related U.S. Appl. No. 11/537,245 dated Mar. 9, 2009, 19 pp.
U.S. Patent and Trademark Office, Non-Final Office Action received in related U.S. Appl. No. 11/537,492 dated Dec. 1, 2008, 19 pp.
U.S. Patent and Trademark Office, Non-Final Office Action received in related U.S. Appl. No. 11/537,245 dated Oct. 17, 2008, 17 pp.
European Patent Office, International Search Report and Written Opinion received in related International Application No. PCT/US2007/079681 dated Sep. 1, 2008, 13 pp.
Kim et al., Highly Conductive HfNx Films Prepared by Plasma-assisted Atomic Layer Deposition, Electromechanical and Solid-State Letters, 9 (8) C123-C125 (2006).
Xu et al., A Chemical Mechanism for Nitrogen Incorporation into HfO2 ALD Films Using Ammonia And Alkylamide As Precursors, Surface Science 591 (2005) L280-L285.
Xu et al., Atomic Layer Deposition of Hafnium Nitrides Using Ammonia and Alkylamide Precursors, Chemical Physics Letters 407 (2005) 272-275.
Becker et al., Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides, Chem. Mater. 2004, 16, 3497-3501.
Niinisto et al., Advanced Electronic and Optoelectronic Materials by Atomic Layer Deposition: an Overview with Special Emphasis on Recent Progress in Processing of High-k Dielectrics and Other Oxide Materials, Phys. Stat. Sol. (A) 201, No. 7, 1443-1452 (2004).
U.S. Patent and Trademark Office, Final Office Action received in related U.S. Appl. No. 11/278,387 dated Apr. 3, 2009, 15 pp.
U.S. Patent and Trademark Office, Non-final Office Action received in related U.S. Appl. No. 11/278,393 dated Oct. 7, 2009, 9 pp.
U.S. Patent and Trademark Office, Non-final Office Action received in related U.S. Appl. No. 11/278,396 dated Oct. 7, 2009, 9 pp.
U.S. Patent and Trademark Office, Non-final Office Action received in related U.S. Appl. No. 11/278,399 dated Sep. 22, 2009, 22 pp.
U.S. Patent and Trademark Office, Non-final Office Action received in related U.S. Appl. No. 11/278,387 dated Sep. 4, 2009, 8 pp.
U.S. Patent and Trademark Office, Final Office Action received in related U.S. Appl. No. 11/537,245 dated Aug. 6, 2009, 12 pp.
U.S. Patent and Trademark Office, Final Office Action received in related U.S. Appl. No. 11/278,396 dated Jun. 2, 2009, 13 pp.
U.S. Patent and Trademark Office, Final Office Action, received in related U.S. Appl. No. 11/278,393, dated Apr. 1, 2010, 20 pp.
U.S. Patent and Trademark Office, Final Office Action, received in related U.S. Appl. No. 11/278,396, dated Apr. 1, 2010, 18 pp.
U.S. Patent and Trademark Office, Final Office Action, received in related U.S. Appl. No. 11/278,399, dated Feb. 24, 2010, 52 pp.

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