Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-06-28
2010-12-14
Vinh, Lan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S710000, C156S345450
Reexamination Certificate
active
07851368
ABSTRACT:
In a plasma processing system having a plasma processing chamber, at least one powered electrode and an ignition electrode, a method for igniting a plasma is disclosed. The method includes introducing a substrate into the plasma processing chamber. The method also includes flowing a gas mixture into the plasma processing chamber; energizing the ignition electrode at a strike frequency; and striking a plasma from the gas mixture with the ignition electrode. The method further includes energizing the at least one powered electrode with a target frequency, wherein the strike frequency is greater than the target frequency; and de-energizing the ignition electrode while processing the substrate in the plasma processing chamber.
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“Chinese Office Action”, U.S. Appl. No. 200680023828.2, Date Mailed Jul. 10, 2009.
Hudson Eric
Marakhtanov Alexei
IP Strategy Group, P.C.
Lam Research Corporation
Vinh Lan
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