Methods and apparatus for igniting a low pressure plasma

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S710000, C156S345450

Reexamination Certificate

active

07851368

ABSTRACT:
In a plasma processing system having a plasma processing chamber, at least one powered electrode and an ignition electrode, a method for igniting a plasma is disclosed. The method includes introducing a substrate into the plasma processing chamber. The method also includes flowing a gas mixture into the plasma processing chamber; energizing the ignition electrode at a strike frequency; and striking a plasma from the gas mixture with the ignition electrode. The method further includes energizing the at least one powered electrode with a target frequency, wherein the strike frequency is greater than the target frequency; and de-energizing the ignition electrode while processing the substrate in the plasma processing chamber.

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