Semiconductor device having EDMOS transistor and method for...

Details Semiconductor device having EDMOS transistor and method for... Semiconductor device having EDMOS transistor and method for...

2007-12-12

2010-12-14

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C438S301000, C438S305000, C438S306000, C438S307000, C438S437000, C257S334000, C257S336000, C257SE21427, C257SE29040, C257SE29268

Reexamination Certificate

active

07851329

ABSTRACT:
A semiconductor device having an EDMOS transistor and a method for forming the same are provided. The semiconductor device includes source and drain regions formed separately in a semiconductor substrate, a first gate insulating layer filling a trench formed in the substrate between the source and drain regions, the first gate insulating layer being adjacent to the drain region and separated from the source region, a second gate insulating layer formed over the substrate between the first gate insulating layer and the source region, the second gate insulating layer being thinner than the first gate insulating layer, a gate electrode formed over the first and second gate insulating layers, and a doped drift region formed in the substrate under the first gate insulating layer, the doped drift region being in contact with the drain region. This reduces the planar area of the EDMOS transistor, thereby achieving highly integrated semiconductor devices.

REFERENCES:
patent: 6531355 (2003-03-01), Mosher et al.
patent: 2003/0003669 (2003-01-01), Bromberger et al.
patent: 2003/0190789 (2003-10-01), Salama et al.
patent: 2005/0062102 (2005-03-01), Dudek et al.

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