Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-08-22
2010-02-02
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S014000, C438S638000, C438S639000, C438S640000, C438S700000, C257SE21577, C257SE21578, C257SE21585
Reexamination Certificate
active
07655558
ABSTRACT:
Method and system for determining semiconductor characteristics. In a specific embodiment, the present invention provides a method for determining one or more characteristics of a partially processed integrated circuit. The method includes a step for providing a substrate material. The method further includes a step for forming at least one opening within the substrate material. The opening can be characterized by an opening characteristic that includes a depth and an opening width associated with an unknown volume. The method includes a step for providing fill material. Additionally, the method includes a step for processing the fill material to cause a first portion of the fill material to enter the opening and occupy an entirety of the unknown volume associated with the opening characteristic while a second portion of the fill material remains outside of the unknown volume. Moreover, the method includes a step for processing the second portion of the fill material using one or more processes to determine a spatial characteristic associated with the unknown volume.
REFERENCES:
patent: 6514860 (2003-02-01), Okada et al.
patent: 2005/0085068 (2005-04-01), Chiang et al.
Ahmadi Mohsen
Garber Charles D
Semiconductor Manufacturing International (Shanghai) Corporation
Townsend and Townsend / and Crew LLP
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