Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-12-31
2010-10-26
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S664000, C257SE21622
Reexamination Certificate
active
07820546
ABSTRACT:
A method for manufacturing a semiconductor device includes forming an insulation layer having a contact hole on a semiconductor substrate. A metal silicide layer is deposited on a surface of the contact hole and the insulation layer to have a concentration gradient that changes from a silicon-rich composition to a metal-rich composition, with the lower portion of the metal silicide layer having the silicon-rich composition and the upper portion of the metal silicide layer having the metal-rich composition. The metal silicide layer is then annealed so that the compositions of metal and silicon in the metal silicide layer become uniform.
REFERENCES:
patent: 7605077 (2009-10-01), Henson et al.
patent: 2008/0048274 (2008-02-01), Seo et al.
patent: 2009/0108382 (2009-04-01), Eriksen et al.
patent: 2009/0136765 (2009-05-01), Maschwitz et al.
patent: 2009/0317972 (2009-12-01), Anderson et al.
patent: 1998-0079138 (1998-11-01), None
Jung Dong Ha
Kim Baek Mann
Kim Jeong Tae
Lee Nam Yeal
Park Chang Soo
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Le Thao P.
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