Semiconductor device

Details Semiconductor device Semiconductor device

2009-05-26

2010-11-16

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000, C257S287000, C257SE21444, C257SE21380, C257SE21453, C257S288000, C257S500000, C257S501000, C257S502000, C438S270000, C438S183000

Reexamination Certificate

active

07834407

ABSTRACT:
In a power MISFET having a trench gate structure with a dummy gate electrode, a technique is provided for improving the performance of the power MISFET, while preventing electrostatic breakdown of a gate insulating film therein. A power MISFET having a trench gate structure with a dummy gate electrode, and a protective diode are formed on the same semiconductor substrate. The protective diode is provided between a source electrode and a gate interconnection. In a manufacturing method of such a semiconductor device, a polycrystalline silicon film for the dummy gate electrode and a polycrystalline silicon film for the protective diode are formed simultaneously. A source region of the power MISFET and an n+-type semiconductor region of the protective diode are formed in the same step.

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