Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-02-16
2010-06-29
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S774000, C257SE23145, C438S684000
Reexamination Certificate
active
07745937
ABSTRACT:
A first gas including a silicon-containing compound is introduced into a vacuum chamber, to expose a semiconductor substrate placed in the chamber to the first gas atmosphere (silicon processing step). Then the pressure inside the vacuum chamber is reduced to a level lower than the pressure at the time of starting the silicon processing step (depressurizing step). Thereafter, a second gas including a nitrogen-containing compound is introduced into the vacuum chamber, and the semiconductor substrate is irradiated with the second gas plasma (nitrogen plasma step).
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Ohto Koichi
Takewaki Toshiyuki
Usami Tatsuya
NEC Electronics Corporation
Purvis Sue
Soderholm Krista
Young & Thompson
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