Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-02-21
2010-06-08
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S166000, C257SE21413, C257SE21415
Reexamination Certificate
active
07732263
ABSTRACT:
The present invention is to provide a semiconductor device that achieves high mechanical strength without reducing the circuit scale and that can prevent the data from being forged and altered illegally while suppressing the cost. The present invention discloses a semiconductor device typified by an ID chip that is formed from a semiconductor thin film including a first region with high crystallinity and a second region with the crystallinity inferior to the first region. Specifically, a TFT (thin film transistor) of a circuit requiring high-speed operation is formed by using the first region and a memory element for an identifying ROM is formed by using the second region.
REFERENCES:
patent: 5529951 (1996-06-01), Noguchi et al.
patent: 5789763 (1998-08-01), Kato et al.
patent: 5856788 (1999-01-01), Walter et al.
patent: 5943593 (1999-08-01), Noguchi et al.
patent: 5981974 (1999-11-01), Makita
patent: 6072559 (2000-06-01), Kanemori et al.
patent: 6709905 (2004-03-01), Kusumoto et al.
patent: 2003/0022403 (2003-01-01), Shimoda et al.
patent: 2003/0062845 (2003-04-01), Yamazaki et al.
patent: 2003/0160715 (2003-08-01), Maeda et al.
patent: 2004/0106237 (2004-06-01), Yamazaki
patent: 60-153156 (1985-08-01), None
patent: 2001-260580 (2001-09-01), None
patent: 2003-059831 (2003-02-01), None
patent: WO 97/34222 (1997-09-01), None
International Search Report (Application No. PCT/JP2005/003225) dated Jun. 7, 2005.
Written Opinion (Application No. PCT/JP2005/003225) dated Jun. 7, 2005.
Dairiki Koji
Yamazaki Shunpei
Lindsay, Jr. Walter L
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co. Ltd
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4220604