SRAM device structure including same band gap transistors...

Details SRAM device structure including same band gap transistors... SRAM device structure including same band gap transistors...

2008-01-03

2010-06-01

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27098

Reexamination Certificate

active

07728392

ABSTRACT:
An SRAM semiconductor device includes: at least a first and a second field effect transistor formed on a same substrate, each of the transistors including a gate stack, each gate stack including a semiconductor layer disposed on a metal layer, the metal layer being disposed on a high-k dielectric layer located over a chemical region, wherein the metal layer of the first gate stack and the metal layer of the second gate stack have approximately a same work function, and wherein each channel region has approximately a same band gap.

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