Methods for fabricating FinFET structures having different...

Details Methods for fabricating FinFET structures having different... Methods for fabricating FinFET structures having different...

2009-02-04

2010-11-09

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S197000, C438S689000, C438S694000

Reexamination Certificate

active

07829466

ABSTRACT:
Methods for fabricating FinFET structures having gate structures of different gate widths are provided. The methods include the formation of sidewall spacers of different thicknesses to define gate structures of the FinFET structures with different gate widths. The width of a sidewall spacer is defined by the height of the structure about which the sidewall spacer is formed, the thickness of the sidewall spacer material layer from which the spacer is formed, and the etch parameters used to etch the sidewall spacer material layer. By forming structures of varying height, forming the sidewall spacer material layer of varying thickness, or a combination of these, sidewall spacers of varying width can be fabricated and subsequently used as an etch mask so that gate structures of varying widths can be formed simultaneously.

REFERENCES:
patent: 7301210 (2007-11-01), Abadeer et al.
patent: 2005/0153562 (2005-07-01), Furukawa et al.
patent: 2006/0046200 (2006-03-01), Abatchev et al.
patent: 2007/0215874 (2007-09-01), Furukawa et al.
patent: 2007/0249174 (2007-10-01), Yang
U.S. Appl. No. 12/412,722, filed Mar. 27, 2009, Schultz, et al.

Affiliated with

Also associated with

Rating

Methods for fabricating FinFET structures having different... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for fabricating FinFET structures having different..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for fabricating FinFET structures having different... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4218389