Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-06-13
2010-10-12
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257S330000, C257S339000, C257S341000, C257S343000
Reexamination Certificate
active
07812392
ABSTRACT:
A semiconductor device includes a first first-conductivity-type semiconductor layer, a second first-conductivity-type semiconductor layer provided on a major surface of the first first-conductivity-type semiconductor layer; a third second-conductivity-type semiconductor layer being adjacent to the second first-conductivity-type semiconductor layer, provided on the major surface of the first first-conductivity-type semiconductor layer, and forming a periodic array structure in combination with the second first-conductivity-type semiconductor layer in a horizontal direction generally parallel to the major surface of the first first-conductivity-type semiconductor layer, and a sixth semiconductor layer located outside and adjacent to the periodic array structure of the second first-conductivity-type semiconductor layer and the third second-conductivity-type semiconductor layer, provided on the major surface of the first first-conductivity-type semiconductor layer, and having a lower impurity concentration than the periodic array structure. The amount of impurity in the outermost semiconductor layer of the first conductivity type or the second conductivity type adjacent to the sixth semiconductor layer in the periodic array structure is generally half the amount of impurity in the second first-conductivity-type semiconductor layer or the third second-conductivity-type semiconductor layer inside the outermost semiconductor layer.
REFERENCES:
patent: 6475864 (2002-11-01), Sato et al.
patent: 6512268 (2003-01-01), Ueno
patent: 6844592 (2005-01-01), Yamaguchi et al.
patent: 7009239 (2006-03-01), Tokuda et al.
patent: 7115475 (2006-10-01), Yamaguchi et al.
patent: 7224022 (2007-05-01), Tokano et al.
patent: 2005/0199905 (2005-09-01), Komachi
patent: 2006/0017096 (2006-01-01), Yanagisawa et al.
patent: 2007/0221950 (2007-09-01), Suzuki et al.
patent: 2007/0272977 (2007-11-01), Saito et al.
patent: 8-264787 (1996-10-01), None
patent: 2000-277726 (2000-10-01), None
patent: 2002-170955 (2002-06-01), None
patent: 2005-136099 (2005-05-01), None
patent: 2006-173202 (2006-06-01), None
Ono Syotaro
Saito Wataru
Kabushiki Kaisha Toshiba
Lee Kyoung
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Richards N Drew
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4217400