Light-emitting device and manufacturing method thereof

Details Light-emitting device and manufacturing method thereof Light-emitting device and manufacturing method thereof

2004-08-11

2010-12-28

Wilson, Allan R (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant material

C257S103000, C257SE33028, C257SE33031

Reexamination Certificate

active

07859007

ABSTRACT:
To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.

REFERENCES:
patent: 5798537 (1998-08-01), Nitta
patent: 6399966 (2002-06-01), Tsuda et al.
patent: 6468882 (2002-10-01), Motoki et al.
patent: 6515313 (2003-02-01), Ibbetson et al.
patent: 6549552 (2003-04-01), Omi et al.
patent: 6849878 (2005-02-01), Bader et al.
patent: 6881983 (2005-04-01), Narayan et al.
patent: 6887311 (2005-05-01), Fudeta et al.
patent: 6936488 (2005-08-01), D'Evelyn et al.
patent: 6969874 (2005-11-01), Gee et al.
patent: 2001/0028064 (2001-10-01), Hirayama et al.
patent: 2001/0030316 (2001-10-01), Kuramoto et al.
patent: 2001/0030318 (2001-10-01), Nakamura et al.
patent: 2001/0055660 (2001-12-01), Tischler et al.
patent: 2002/0053665 (2002-05-01), Tsuda et al.
patent: 2002/0096674 (2002-07-01), Cho et al.
patent: 2003/0006418 (2003-01-01), Emerson et al.
patent: 2000-349396 (2000-12-01), None
patent: 2001-160539 (2001-06-01), None
patent: 2001237455 (2001-08-01), None
patent: 2002-026459 (2002-01-01), None
patent: 2002-084040 (2002-03-01), None
patent: 2002-280610 (2002-09-01), None
patent: 2002-335052 (2002-11-01), None
patent: 2003-086533 (2003-03-01), None
patent: 2003-115642 (2003-04-01), None
patent: 2003-142732 (2003-05-01), None
patent: 2003-527745 (2003-09-01), None
patent: 2004-200347 (2004-07-01), None
patent: 494583 (2002-07-01), None
patent: WO 02/19439 (2002-03-01), None
T. Nishida et al., “Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN”, Applied Physics Letters, vol. 79, No. 6, Aug. 6, 2001, pp. 711-712.
S. Einfeldt et al., “Strain relaxation in AlGaN under tensile plane stress”, Journal of Applied Physics, vol. 88, No. 12, Dec. 15, 2000, pp. 7029-7036.
Office Action in U.S. Appl. No. 11/818,024, mailed Feb. 26, 2008, 8 pages, USPTO, Alexandria, VA, USA.
Office Action in U.S. Appl. No. 11/818,024, mailed Oct. 20, 2008, 9 pages, USPTO, Alexandria, VA, USA.
Office Action in U.S. Appl. No. 11/818,024, mailed Apr. 28, 2009, 11 pages, USPTO, Alexandria, VA, USA.
Office Action in U.S. Appl. No. 11/818,024, mailed Nov. 30, 2009, 10 pages, USPTO, Alexandria, VA, USA.
Office Action in Taiwanese Pat. App. No. 093123921, mailed Jan. 12, 2010 (5 pages), plus Taiwanese search report (1 page), with English translation (7 pages).
European Search Report for Application EP 04019227.0, dated Jul. 29, 2010, 3 pages, European Patent Office, HV Rijswijk, Netherlands.

Affiliated with

Also associated with

Rating

Light-emitting device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light-emitting device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light-emitting device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4217126