Semiconductor device utilizing a metal gate material such as...

Details Semiconductor device utilizing a metal gate material such as... Semiconductor device utilizing a metal gate material such as...

2006-08-10

2010-02-09

Nguyen, Ha T. (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21655, C438S270000

Reexamination Certificate

active

07659572

ABSTRACT:
Known drawbacks associated with use of tungsten as a gate material in a semiconductor device are prevented. A gate oxide layer, a polysilicon layer, and a nitride layer are sequentially formed on a semiconductor substrate having a isolation layer for defining the active region. A recess is defined by etching the nitride layer. A metal nitride layer is formed in the recess in an U shape, and then a metal layer is formed to bury the recess. A hard mask layer is formed for defining a gate forming region on the nitride layer, the metal nitride layer, and the metal layer. A metal gate is formed by etching the nitride layer, the polysilicon layer, and the gate oxide layer using the hard mask layer as an etch barrier.

REFERENCES:
patent: 6730581 (2004-05-01), Suguro
patent: 2002/0022355 (2002-02-01), Kim
patent: 2004/0135176 (2004-07-01), Kim
patent: 2005/0106820 (2005-05-01), Tran

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