Photomask and its method of manufacture

Details Photomask and its method of manufacture Photomask and its method of manufacture

2007-08-01

2010-06-29

Bryant, Kiesha R (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C438S585000

Reexamination Certificate

active

07745899

ABSTRACT:
An embodiment of a photomask for forming gate lines and a method of manufacturing semiconductor devices using the photomask is disclosed. The photomask includes a photomask substrate, gate line mask patterns that define gate lines that cross at least one active region on a semiconductor substrate, and that are arranged in parallel, gate tab mask patterns formed on both sides of each gate line mask pattern, and joints formed between adjacent gate tab mask patterns, and that include a separation region. A relatively large gate tab mask pattern can be formed using the photomask. And a short channel effect at the boundary of the active region can be improved with the large gate tab mask pattern, so the characteristics and reliability of the semiconductor devices can be improved.

REFERENCES:
patent: 2006/0148158 (2006-07-01), Cho et al.
patent: 1999-024655 (1999-04-01), None
patent: 2004-0013460 (2004-02-01), None
patent: 2005-0008052 (2005-01-01), None
patent: 2005-0066842 (2005-06-01), None
patent: 2006-0025071 (2006-03-01), None
patent: 2006-0080715 (2006-07-01), None
patent: 2007-0056415 (2007-06-01), None
English language abstract of Korean Publication No. 2004-0013460.
English language abstract of Korean Publication No. 2005-0008052.
English language abstract of Korean Publication No. 2005-2006-0025071.

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