TiC as a thermally stable p-metal carbide on high k SiO 2...

Details TiC as a thermally stable p-metal carbide on high k SiO 2... TiC as a thermally stable p-metal carbide on high k SiO 2...

2005-01-13

2010-02-23

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S411000

Reexamination Certificate

active

07667277

ABSTRACT:
A compound metal comprising TiC which is a p-type metal having a workfunction of about 4.75 to about 5.3, preferably about 5, eV that is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer is provided as well as a method of fabricating the TiC compound metal. Furthermore, the TiC metal compound of the present invention is a very efficient oxygen diffusion barrier at 1000° C. allowing very aggressive equivalent oxide thickness (EOT) and inversion layer thickness scaling below 14 Å in a p-metal oxide semiconductor (pMOS) device.

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