Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-02
2010-02-09
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S303000, C257S306000, C257S308000, C257S516000, C257S532000, C257SE21647, C257SE27048, C257SE29345, C438S239000, C438S381000, C438S396000, C361S321200, C361S321400
Reexamination Certificate
active
07659568
ABSTRACT:
An external electrode structure for a monolithic ceramic capacitor provided with a function as a resistance element is capable of preventing a reduction of the external electrode due to baking in a reducing atmosphere, so that Ni or a Ni alloy can be used in an internal electrode and a good electrical connection between the internal electrode and the external electrode is achieved. The external electrodes disposed on an outer surface of a capacitor main body include an electrically conductive layer and a metal plating layer disposed thereon, and the electrically conductive layer includes a compound oxide, e.g., an In—Sn compound oxide, which reacts with Ni or the Ni alloy, and a glass component.
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Official communication issued in counterpart Korean Application No. 10-2007-7003940, mailed on May 1, 2008.
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Kusano Mitsuhiro
Watanabe Shizuharu
Huynh Andy
Keating & Bennett LLP
Murata Manufacturing Co. Ltd.
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