Silicon carbide semiconductor device and method of...

Details Silicon carbide semiconductor device and method of... Silicon carbide semiconductor device and method of...

2009-05-14

2010-12-21

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S077000, C257S329000, C438S270000

Reexamination Certificate

active

07855412

ABSTRACT:
An SiC semiconductor device includes a substrate, a drift layer disposed on a first surface of the substrate, a base region disposed above the drift layer, a source region disposed above the base region, a trench penetrating the source region and the base region to the drift layer, a gate insulating layer disposed on a surface of the trench, a gate electrode disposed on a surface of the gate insulating layer, a first electrode electrically coupled with the source region and the base region, a second electrode disposed on the second surface of the substrate, and a second conductivity-type layer disposed at a portion of the base region located under the source region. The second conductivity-type layer has the second conductivity type and has an impurity concentration higher than the base region.

REFERENCES:
patent: 6645815 (2003-11-01), Hshieh et al.
patent: 2009/0072241 (2009-03-01), Harris et al.
patent: 2009/0200559 (2009-08-01), Suzuki et al.
patent: A-2007-281265 (2007-10-01), None

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