Single poly non-volatile memory device with inversion...

Details Single poly non-volatile memory device with inversion... Single poly non-volatile memory device with inversion...

2006-02-22

2010-02-02

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29300

Reexamination Certificate

active

07655970

ABSTRACT:
A non-volatile memory device comprises a substrate with the dielectric layer formed thereon. A control gate and a floating gate are then formed next to each other on top of the dielectric layer separated by a gap. Accordingly, a non-volatile memory device can be constructed using a single poly process that is compatible with conventional CMOS processes. In addition, assist gates are formed on the dielectric layer next to the control gate and floating gate respectively.

REFERENCES:
patent: 6917070 (2005-07-01), Hung et al.
patent: 2003/0203575 (2003-10-01), Hung et al.
patent: 2005/0145923 (2005-07-01), Chen et al.
Y. Sasago, et al.. 90-nm-Node Multi-level AG-AND Type flash Memory with Cell Size of True 2 F2/bit and Programming Throughout of 10 MB/s, IEEE, 2003.
Daniel C. Guterman, et al., An Electrically Nonvolatile Memory Cell Using a Floating-Gate Structure, IEEE 1979.

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