Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-09
2010-11-09
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29001, C257SE31027, C257SE31029
Reexamination Certificate
active
07829930
ABSTRACT:
A technique that can realize high integration even for multilayered three-dimensional structures at low costs by improving the performance of the semiconductor device having recording or switching functions by employing a device structure that enables high precision controlling of the movement of ions in the solid electrolyte. The semiconductor element of the device is formed as follows; two or more layers are deposited with different components respectively between a pair of electrodes disposed separately in the vertical (z-axis) direction, then a pulse voltage is applied between those electrodes to form a conductive path. The resistance value of the path changes according to an information signal. Furthermore, a region is formed at a middle part of the conductive path. The region is used to accumulate a component that improves the conductivity of the path, thereby enabling the resistance value (rate) to response currently to the information signal. More preferably, an electrode should also be formed at least in either the x-axis or y-axis direction to apply a control voltage to the electrode.
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patent: 2006-173267 (2006-06-01), None
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Sakamoto et al. “A Nonvolatile Programmable Solid Electrolyte Nanometer Switch”, IEEE International Solid-State Circuits Conference 2004, Session 16, p. 16.3.
Kozicki et al. “Non-Volatile Memory Based on Solid Electrolytes”, IEEE 2004, Proc. Non-Volatile Memory Technology Symposium (MVMTS), pp. 10-17.
Irie Naohiko
Matsuoka Hideyuki
Sasago Yoshitaka
Takaura Norikatsu
Takemura Riichiro
Fahmy Wael M
Hitachi , Ltd.
Ingham John C
Miles & Stockbridge P.C.
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