Method for manufacturing thin film transistor

Details Method for manufacturing thin film transistor Method for manufacturing thin film transistor

2006-07-18

2010-10-19

Geyer, Scott B (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S099000, C438S677000

Reexamination Certificate

active

07816263

ABSTRACT:
Disclosed is a method for manufacturing a thin film transistor having high resolution and high pattern accuracy with high production efficiency. Particularly disclosed is a method for manufacturing a thin film transistor wherein there is prevented deterioration of semiconductor properties in a plating step for electrode formation. This method is characterized in that a source electrode or a drain electrode is formed by such a process wherein a protective film is formed on an organic semiconductor layer, then a plating catalyst pattern is formed thereon by supplying a liquid containing a plating catalyst, and then a plating agent is brought into contact with the pattern.

REFERENCES:
patent: 6452207 (2002-09-01), Bao
patent: 2005/0151195 (2005-07-01), Kawase et al.
patent: 2007/0004202 (2007-01-01), Fujii
patent: 2004-158805 (2004-06-01), None
patent: 2004-221573 (2004-08-01), None

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