Epoxy resin composition for semiconductor encapsulation and...

Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant

Reexamination Certificate

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C257S787000, C257S788000, C257S789000, C257S795000, C428S413000, C523S440000, C523S443000, C523S456000, C523S461000, C523S466000

Reexamination Certificate

active

07667339

ABSTRACT:
An epoxy resin composition for semiconductor encapsulation includes at least one epoxy resin, at least one curing agent, at least one filler, and at least one first curing accelerator, the first curing accelerator having a tetracyanoethylene, a 7,7,8,8-tetracyanoquinodimethane, a compound having the chemical structure of Formula 1, or a mixture thereof,wherein each of R1through R7, independently, represents a hydrogen atom or a C1-C12hydrocarbon group, provided that when R1through R7are C1-C12hydrocarbon groups, R1and R2, R2and R3, R3and R4, R4and R5, R5and R6, and R6and R7can be joined to each other to form a cyclic structure.

REFERENCES:
patent: 4624912 (1986-11-01), Zweifel et al.
patent: 4631306 (1986-12-01), Markert et al.
patent: 5541000 (1996-07-01), Hardy et al.
patent: 05-156126 (1993-06-01), None
patent: 6-271653 (1994-09-01), None
patent: 6-322073 (1994-11-01), None
patent: 6-326220 (1994-11-01), None
Derwent abstract of JP 05-156126.
Machine translation of JP 05-156126, provided by the JPO website.
Ryu, Je Hong, et al., Latent Catalyst Effects in Halogen-Free Epoxy.
Ryu, Je Hong, et al., “Latent Catalyst Effects in Halogen-Free Epoxy Molding Compounds for Semiconductor Encapsulation”, Journal of Applied Polymer Science, vol. 96, pp. 2287-2299 (2005).

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