Storage device and semiconductor device

Static information storage and retrieval – Systems using particular element

Reexamination Certificate

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Details

Other Related Categories

C365S175000, C365S145000, C365S151000

Type

Reexamination Certificate

Status

active

Patent number

07660145

Description

ABSTRACT:
An object of the present invention is to provide nonvolatile, rewritable, easily-manufactured, and inexpensive storage element, storage device, and semiconductor device, which are superior in switching characteristics and which has low operation voltage. In an element including a first conductive layer, a second conductive layer facing the first conductive layer, and a layer containing at least one kind of an organic compound provided between the first conductive layer and the second conductive layer, the organic compound can be electrochemically doped or dedoped. By feeding current in this element, the organic compound provided between the conductive layers is electrochemically doped, i.e., electrons are transported, whereby the conductivity can be increased by about three to ten digits.

REFERENCES:
patent: 5356526 (1994-10-01), Frankenthal et al.
patent: 5883397 (1999-03-01), Isoda et al.
patent: 6777249 (2004-08-01), Yamazaki
patent: 6950331 (2005-09-01), Yang et al.
patent: 7289353 (2007-10-01), Spitzer et al.
patent: 7443710 (2008-10-01), Fang et al.
patent: WO 2004/015778 (2004-02-01), None

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