Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2008-10-23

2010-11-02

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S750000, C257SE21230, C257SE21304

Reexamination Certificate

active

07825028

ABSTRACT:
Disclosed is a method for manufacturing a semiconductor device comprising forming a hydrophobic interlayer insulating film having a relative dielectric constant of 3.5 or less above a semiconductor substrate, forming a recess in the interlayer insulating film, depositing a conductive material above the interlayer insulating film having the recess to form a conductive layer, selectively removing the conductive material deposited above the interlayer insulating film by polishing to expose a surface of the interlayer insulating film while leaving the conductive material in the recess, and subjecting the surface of the interlayer insulating film having the recess filled with the conductive material to pressure washing using a resin member and an alkaline washing liquid containing an inorganic alkali and exhibiting a pH of more than 9.

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Notice of Reasons For Rejections mailed Jan. 27, 2009 in counterpart Japanese Patent Application No. 2004-210180, and English language translation thereof.
English language Patent Abstract of JP 08-250455.
English language Patent Abstract of JP 2002-079190.
English language Patent Abstract of JP 2003-179020.
English language Patent Abstract of JP 2003-289060.
Decision of Rejection mailed Jul. 14, 2009, from the Japanese Patent Office in corresponding Japanese Patent Application No. 2004-210180, and English language translation thereof.

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