Structure for stochastic integrated circuit personalization

Details Structure for stochastic integrated circuit personalization Structure for stochastic integrated circuit personalization

2008-08-18

2010-11-23

Blum, David S (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S005000, C257SE47001, C257SE51003

Reexamination Certificate

active

07838873

ABSTRACT:
A method of forming a stochastically based integrated circuit encryption structure includes forming a lower conductive layer over a substrate, forming a short prevention layer over the lower conductive layer, forming an intermediate layer over the short prevention layer, wherein the intermediate layer is characterized by randomly structured nanopore features. An upper conductive layer is formed over the random nanopore structured intermediate layer. The upper conductive layer is patterned into an array of individual cells, wherein a measurable electrical parameter of the individual cells has a random distribution from cell to cell with respect to a reference value of the electrical parameter.

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