Method and resultant structure for floating body memory on...

Details Method and resultant structure for floating body memory on... Method and resultant structure for floating body memory on...

2009-04-02

2010-12-14

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257SE21127, C438S164000, C438S157000, C438S479000

Reexamination Certificate

active

07851862

ABSTRACT:
A method for making floating body memory cells from a bulk substrate. A thin silicon germanium and overlying silicon layers are formed on the bulk substrate. Anchors and a bridge are formed to support the silicon layer when the silicon germanium layer is etched so that it can be replaced with an oxide.

REFERENCES:
patent: 2003/0215988 (2003-11-01), Zahurak et al.
patent: 2004/0195610 (2004-10-01), Morikado
patent: 2007/0022941 (2007-02-01), Park et al.
patent: 2008/0112231 (2008-05-01), Shum

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