Method of forming vias in semiconductor substrates and...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S637000

Reexamination Certificate

active

07855140

ABSTRACT:
Methods for forming through vias in a semiconductor substrate and resulting structures are disclosed. In one embodiment, a through via may be formed by forming a partial via from an active surface through a conductive element thereon and a portion of the substrate underlying the conductive element. The through via may then be completed by laser ablation or drilling from a back surface. In another embodiment, a partial via may be formed by laser ablation or drilling from the back surface of a substrate to a predetermined distance therein. The through via may be completed from the active surface by forming a partial via extending through the conductive element and the underlying substrate to intersect the laser-drilled partial via. In another embodiment, a partial via may first be formed by laser ablation or drilling from the back surface of the substrate followed by dry etching to complete the through via.

REFERENCES:
patent: 4445978 (1984-05-01), Whartenby et al.
patent: 4806111 (1989-02-01), Nishi et al.
patent: 5229647 (1993-07-01), Gnadinger
patent: 5438212 (1995-08-01), Okaniwa
patent: 6013948 (2000-01-01), Akram et al.
patent: 6018196 (2000-01-01), Noddin
patent: 6114240 (2000-09-01), Akram et al.
patent: 6294425 (2001-09-01), Hideki
patent: 6420209 (2002-07-01), Siniaguine
patent: 6620731 (2003-09-01), Farnworth et al.
patent: 6667551 (2003-12-01), Hanaoka et al.
patent: 7598167 (2009-10-01), Watkins et al.
Lee et al., Laser Created Silicon Vias for Stacking Dies in MCMs, EMT Symposium, 1991, Tampa, Florida, pp. 262-265.
Chu et al., Laser Micromachining of Through Via Interconnects in Active Die for 3-D Multichip Module, IEEE/CPMT Int'l EMT Symposium, 1995, pp. 120-126.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming vias in semiconductor substrates and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming vias in semiconductor substrates and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming vias in semiconductor substrates and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4209445

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.