Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-10-01
2010-12-28
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257SE33053, C349S106000
Reexamination Certificate
active
07858986
ABSTRACT:
The present invention relates to a thin film transistor array panel and a manufacturing method thereof. The thin film transistor array panel according to the present invention includes a substrate, a light blocking member formed on the substrate, a gate line disposed on the light blocking member. The gate line and the light blocking member define a closed region A color filter is formed in the closed region and contacts the side surface of the gate line. A gate insulating layer is formed on the gate line and the color filter, a data line and a drain electrode are formed on the gate insulating layer, and a pixel electrode is connected to the drain electrode.
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Chin Hong-Kee
Choi Seung-Ha
Jeong Yu-Gwang
Kang Yoon-Ho
Oh Min-Seok
Ahmed Selim
Innovation Counsel LLP
Purvis Sue
Samsung Electronics Co,. Ltd.
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