Method for processing copper surface, method for forming...

Details Method for processing copper surface, method for forming... Method for processing copper surface, method for forming...

2005-06-03

2010-11-02

Maldonado, Julio J (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S626000, C438S637000, C438S648000, C438S692000, C438S694000, C438S610000, C438S632000, C257SE21497, C257SE21219, C257SE21226, C257SE21230, C257SE21313, C977S773000, C977S777000

Reexamination Certificate

active

07825026

ABSTRACT:
A gas inlet is disposed in a lower portion of a reaction chamber, a copper substrate is disposed in an upper portion thereof, and a tungsten catalytic body heated to 1600° C. is disposed midway between the two. Ammonia gas introduced from the gas inlet is decomposed by the tungsten catalytic body, a chemical species generated by the decomposition reacts with a surface of the copper substrate, and reduces and removes a contaminant on the copper surface, and a Cu3N thin film is formed on the copper substrate surface. This Cu3N film has the action of a film which prevents the oxidation of copper. This Cu3N film is thermally decomposed and removed when heated to temperatures of not less than 300° C., leaving a clean copper surface behind.

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