Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

2007-11-01

2010-10-05

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S595000, C257SE21176, C257SE21177

Reexamination Certificate

active

07807558

ABSTRACT:
A method of fabricating a semiconductor device is provided. The method of fabricating the semiconductor device comprises providing a substrate. Next, an insulating layer, a conductive layer and a silicide layer are formed on the substrate in sequence. Next, a hard masking layer is formed on the silicide layer exposing a portion of the silicide layer. A first etching step is performed to remove the silicide layer and the underlying conductive layer which are not covered by the hard masking layer, thereby forming a gate stack. And next, a second etching step is performed to remove any remaining conductive layer not covered by the hard masking layer after the first etching step. The second etching step is performed with an etchant comprising ammonium hydroxide.

REFERENCES:
patent: 2004/0126937 (2004-07-01), Gilton et al.
patent: 2004/0129361 (2004-07-01), Chen et al.
patent: 2007/0048976 (2007-03-01), Raghu

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