Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2009-07-15

2010-10-19

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S226000, C365S227000, C365S228000, C365S229000

Reexamination Certificate

active

07817460

ABSTRACT:
A semiconductor memory device having a memory cell including a flip-flop; and a memory cell power supply circuit for supplying a low voltage cell power supply voltage to the memory cell. The memory cell power supply circuit supplies a cell power supply voltage in a first period and a different cell power supply voltage in a second period, a predetermined first power supply voltage in case where the cell power supply voltage in supplied in a data read cycle and in a case where data is not written to a memory cell to which the cell power supply voltage is supplied in a write cycle, and a second power supply voltage higher than the first power supply voltage in a case where data is written to a memory cell to which the cell power supply voltage is supplied in a write cycle.

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United States Office Action issued in U.S. Appl. No. 11/476,566, mailed Oct. 28, 2008.
Chinese Office Action, with English translation, issued in Chinese Patent Application No. CN 200610095997.9, mailed Feb. 6, 2009.

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