Method for forming a gate insulating film

Details Method for forming a gate insulating film Method for forming a gate insulating film

2009-01-06

2010-06-01

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S591000, C257SE21191, C257SE21625, C257SE21639

Reexamination Certificate

active

07727911

ABSTRACT:
In formation of a gate insulating film made of a high dielectric constant metal silicate, atomic layer deposition (ALD) is performed by setting exposure time to a precursor containing a metal or the like to saturation time of a deposition rate by a surface adsorption reaction and by setting exposure time to an oxidizing agent to time required for a composition of a metal oxide film to reach 97% or more of a stoichiometric value.

REFERENCES:
patent: 6858547 (2005-02-01), Metzner et al.
patent: 2002/0115252 (2002-08-01), Haukka et al.
patent: 2005/0235905 (2005-10-01), Senzaki et al.
patent: 2006/0046421 (2006-03-01), Iino et al.
patent: 2006/0199384 (2006-09-01), Ando et al.
patent: 2006/0228888 (2006-10-01), Lee et al.

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