Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-03
2010-10-12
Luu, Chuong Anh (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S300000, C257S303000, C257S296000
Reexamination Certificate
active
07812387
ABSTRACT:
A trench capacitor with an isolation collar in a semiconductor substrate where the substrate adjacent to the isolation collar is free of dopants caused by auto-doping. The method of fabricating the trench capacitor includes the steps of forming a trench in the semiconductor substrate; depositing a dielectric layer on a sidewall of the trench; filling the trench with a first layer of undoped polysilicon; etching away the first layer of undoped polysilicon and the dielectric layer from an upper section of the trench whereby the semiconductor substrate is exposed at the sidewall in the upper section of the trench; forming an isolation collar layer on the sidewall in the upper section of the trench; and filling the trench with a second layer of doped polysilicon.
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Abate Joseph P.
Cohn Howard M.
International Business Machines - Corporation
Luu Chuong Anh
LandOfFree
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