Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2009-04-08
2010-10-12
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S044010
Reexamination Certificate
active
07813396
ABSTRACT:
A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region.
REFERENCES:
patent: 5550854 (1996-08-01), Chen et al.
patent: 5892784 (1999-04-01), Tan et al.
patent: 6526082 (2003-02-01), Corzine et al.
patent: 7091082 (2006-08-01), Feng et al.
patent: 7244997 (2007-07-01), Appelbaum et al.
patent: 7286583 (2007-10-01), Feng et al.
patent: 7354780 (2008-04-01), Feng et al.
patent: 7535034 (2009-05-01), Walter et al.
patent: 2001/0050934 (2001-12-01), Choquette et al.
patent: 2002/0037022 (2002-03-01), Fukagai
patent: 2002/0131464 (2002-09-01), Sirbu et al.
patent: 2005/0040432 (2005-02-01), Feng et al.
patent: 2005/0054172 (2005-03-01), Feng et al.
patent: 2008/0240173 (2008-10-01), Holonyak et al.
patent: 09-074246 (1997-03-01), None
patent: WO97/20353 (1997-06-01), None
patent: WO99/05726 (1999-02-01), None
patent: WO2005/020287 (2005-03-01), None
patent: WO2006/093883 (2006-09-01), None
Ryzhil, “Heterostructure laser transistors controlled by resonant-tunneling electron extraction,” Semicond. Sci. Technol., vol. 12, pp. 431-438, (1997).
Light-Emitting Transistor: Light Emission From InGaP/GaAs Heterojunction Bipolar Transistors, M. Feng, N. Holonyak, Jr., and W. Hafez, Appl. Phys. Lett. 84, 151 (2004).
Quantum-Well-Base Heterojunction Bipolar Light-Emitting Transistor, M. Feng, N. Holonyak, Jr., and R. Chan, Appl. Phys. Lett. 84, 1952 (2004).
Type-II GaAsSb/InP Heterojunction Bipolar Light-Emitting Transistor, M. Feng, N. Holonyak, Jr., B. Chu-Kung, G. Walter, and R. Chan, Appl. Phys. Lett. 84, 4792 (2004).
Laser Operation Of A Heterojunction Bipolar Light-Emitting Transistor, G. Walter, N. Holonyak, Jr., M. Feng, and R. Chan, Appl. Phys. Lett. 85, 4768 (2004).
Microwave Operation And Modulation Of A Transistor Laser, R. Chan, M. Feng, N. Holonyak, Jr., and G. Walter, Appl. Phys. Lett. 86, 131114 (2005).
Room Temperature Continuous Wave Operation Of A Heterojunction Bipolar Transistor Laser, M. Feng, N. Holonyak, Jr., G. Walter, and R. Chan, Appl. Phys. Lett. 87, 131103 (2005).
Visible Spectrum Light-Emitting Transistors, F. Dixon, R. Chan, G. Walter, N. Holonyak, Jr., M. Feng, X. B. Zhang, J. H. Ryou, and R. D. Dupuis, Appl. Phys. Lett. 88, 012108 (2006).
The Transistor Laser, N. Holonyak, M Feng, Spectrum, IEEE vol. 43, Issue 2, Feb. 2006.
Signal Mixing In A Multiple Input Transistor Laser Near Threshold, M. Feng, N. Holonyak, Jr., R. Chan, A. James, and G. Walter, Appl. Phys. Lett. 88, 063509 (2006).
Collector Current Map Of Gain And Stimulated Recombination On The Base Quantum Well Transitions Of A Transistor Laser, R. Chan , N. Holonyak, Jr. , A. James ,and G. Walter; Appl. Phys. Lett 88, 143508 (2006).
Collector Breakdown In The Heterojunction Bipolar Transistor Laser, G. Walter, A. James, N. Holonyak, Jr., M. Feng, and R. Chan Appl. Phys. Lett. 88, 232105 (2006).
High-speed (/spl ges/1 GHz) Electrical And Optical Adding, Mixing, And Processing Of Square-Wave Signals With A Transistor Laser, Milton Feng; N. Holonyak, Jr.; R. Chan; A. James; and G. Walter; Photonics Technology Letters, IEEE vol. 18 Issue: 11; Jun. 2006 pp. 1240-1242.
Graded-Base InGaN/GaN Heterojunction Bipolar Light-Emitting Transistors, B. F. Chu-Kung et al., Appl. Phys. Lett. 89, 082108 (2006).
Carrier LifeTime and Modulation Bandwidth Of A Quantum Well AIGaAs/InGaP/GaAs/InGaAs Transistor Laser, M. Feng, N. Holonyak, Jr., A. James, K. Cimino, G. Walter, and R. Chan; Appl. Phys. Lett. 89, 113504 (2006).
Chirp In A Transitor Laser: Franz-Keldysh Reduction Of The Linewidth Enhancement, G. Walter, A. James, N. Holonyak, Jr., and M. Feng; Appl. Phys. Lett. 90, 091109 (207).
Photon-Assisted Breadkdown, Negative Resistance, And Switching In A Quantum-Well Transistor Laser; A. James, G. Walter, M. Feng, and N. Holonyak, Jr., Appl. Phys. Lett. 90, 152109 (2007).
Franz-Keldysh Photon-Assisted Voltage-Operated Switching Of A Transistor Laser; James,A,; Holonyak, N.: Feng, M.; Walter, G., Photonics Technology Letters, IEEE Volumn; 19 issue;9 May 1, 2007, pp. 680-682.
Experimental Determination Of The Effective Minority Carrier Lifetime In The Operation Of A Quantum-Well n-p-n. Heterojunction Biopolar Light-Emigging Transistor Of Varying Base Quantum-Well Design And doping; H.W. Then, M. Feng, N. Holonyak, Jr., and C.H.Wu, Appl. Phys. Lett. 91, 033505 (2007).
Charge Control Analysis Of Transistor Laser Operation; M. Feng, N. Holonyak, Jr., H.W. Then, and G. Walter; Appl. Phys. 91, 053501 (2007).
Feng Milton
Holonyak, Jr. Nick
Then Han Wui
Walter Gabriel
Carter Michael
Harvey Minsun
Novack Martin
The Board of Trustees of the University of Illinois
LandOfFree
Transistor laser devices and methods does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Transistor laser devices and methods, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor laser devices and methods will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4206208