Continuous plane of thin-film materials for a two-terminal...

Details Continuous plane of thin-film materials for a two-terminal... Continuous plane of thin-film materials for a two-terminal...

2007-07-26

2010-06-22

Pert, Evan (Department: 2826)

Static information storage and retrieval

Systems using particular element

C365S133000, C365S174000, C257S009000, C257S903000, C257SE49001

Reexamination Certificate

active

07742323

ABSTRACT:
A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of conductivity profiles. A select voltage applied across the first and second cladded conductors is operative to perform data operations on the memory device. The memory device may optionally include a non-ohmic device electrically in series with the memory element and the first and second cladded conductors. Fabrication of the memory device does not require the plurality of thin-film layers be etched in order to form the memory element. The memory element can include a CMO layer having a selectively crystallized polycrystalline portion and an amorphous portion. The cladded conductors can include a core material made from copper.

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U.S. Appl. No. 11/881,473, filed Jul. 26, 2007, Brewer et al.

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