Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-03-31
2010-06-22
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S619000, C438S622000, C438S637000, C438S586000, C257SE21575, C257SE21577, C257SE21579, C257SE21585, C257SE21597
Reexamination Certificate
active
07741210
ABSTRACT:
A method of forming conductive interconnects includes forming a node of a circuit component on a substrate. A conductive metal line is formed at a first metal routing level that is elevationally outward of the circuit component. Insulative material is deposited above the first metal routing level over the conductive metal line and the circuit component. In a common masking step, a first opening is etched through the insulative material to the conductive metal line and a second opening is etched through the insulative material to the node of the circuit component that is received elevationally inward of the conductive metal line. Conductive material is concurrently deposited to within the first and second openings in respective conductive connection with the conductive metal line and the node of the circuit component. A first metal line at a second metal routing level that is above the first metal routing level is formed in conductive connection with the conductive material in the first opening. A second metal line at the second metal routing level is formed in conductive connection with the conductive material in the second opening.
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Ahmadi Mohsen
Aptina Imaging Corporation
Garber Charles D
LandOfFree
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