Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-24
2010-06-29
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S316000, C257S317000, C257S318000, C257S320000, C257S321000, C257S322000, C257S323000, C257S324000, C257SE29129, C257SE29300
Reexamination Certificate
active
07745870
ABSTRACT:
A floating gate memory cell has a floating gate in which there are two floating gate layers. The top layer is etched to provide a contour in the top layer while leaving the lower layer unchanged. The control gate follows the contour of the floating gate to increase capacitance therebetween. The two layers of the floating gate can be polysilicon separated by a very thin etch stop layer. This etch stop layer is thick enough to provide an etch stop during a polysilicon etch but preferably thin enough to be electrically transparent. Electrons are able to easily move between the two layers. Thus the etch of the top layer does not extend into the lower layer but the first and second layer have the electrical effect for the purposes of a floating gate of being a continuous conductive layer.
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Chindalore Gowrishankar L.
Swift Craig T.
Chiu Joanna G.
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Nguyen Cuong Q
Tran Trang Q
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