Pixel with transfer gate with no isolation edge

Details Pixel with transfer gate with no isolation edge Pixel with transfer gate with no isolation edge

2008-10-10

2010-11-09

Sandvik, Benjamin P (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27131, C438S060000

Reexamination Certificate

active

07829922

ABSTRACT:
A pixel and imager device, and method of forming the same, where the pixel has a transfer transistor gate associated with a photoconversion device and is isolated in a substrate by shallow trench isolation. The transfer transistor gate does not overlap the shallow trench isolation region.

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EP Office Action dated Jun. 13, 2008 with Written Opinion.
Korean Office Action, and its English translation, dated Nov. 28, 2009 issued in Korean Application No. 10-2008-7002939.

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